Nanoscale Thermal Radiation Laboratory

 

Rad-Pro (Radiative Properties)

In order to achieve high-accuracy temperature measurements in rapid thermal processing (RTP) using lightpipe radiation thermometry, it is critical to be able to determine the radiative properties of silicon wafers with thin-film coatings such as silicon dioxide, silicon nitride, and polysilicon. A software tool, Rad-Pro (named after Radiative Properties), has been developed for easy calculation and plotting of the absorptance, emittance, reflectance, and transmittance of silicon wafers in the RTP environments. The calculated results have been verified by comparison with high-accurate spectral reflectance measurements at room temperature.

 

 

A Calculation Example

Consider the following case. The silicon wafer is coated with a 300-nm silicon dioxide layer on both sides. The thickness of silicon wafer is 700 mm, and silicon is doped with phosphorus (n-type) at 10¹⁶ cm^-3. To consider the doping effects, the Drude model is used. The temperature of silicon wafer with thin-film coatings is 500 °C, and the electromagnetic waves are incident at q=0°. The considered wavelength range is from 0.5 mm to 10 mm in every 0.01 mm, and the incoherent formulation is used for calculation.

 

Input Parameters

• Considered wavelength region: 0.5 - 20 mm • Room temperature • Normal incidence • Incoherent formulation

  

Calculation Results

 

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Download Rad-Pro

 

The Rad-Pro software (Excel file and calculation module) is attached as a ZIP format, and the Rad-Pro manual is in PDF format. To download, click following links.

1. Rad-Pro software  (The latest version of Rad-Pro is 1.2)

2. Rad-Pro manual

• Users are welcome to provide feedback for further improvement and upgrade.
• NOTE: There was a problem in the calculation of the hemispherical emissivity in the previous version (version 1.1), but it has been resolved in the current version. 

 

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